IC-CAP HBT Model Extraction Package

The HBT Model Extraction Package

Using the HBT Model Extraction Package

The new extraction package, for use with Agilent's Integrated Circuit Characterization and Analysis Program (IC-CAP) software, provides a step-by-step extraction flow for the HBT model developed by Dr. David Root of Agilent Technologies. This framework will allow you to easily produce models that will accurately and efficiently represent your GaAs and InP HBT processes.

The Agilent HBT Model Extraction Package is part of Agilent's broad strategy to make state-of-the-art models available to the compound semiconductor device modeler.

Package Features and User interface

The Settings Window is the first window for developing you HBT extraction process. From this window you can document wafer and device information, set device dimensions and process information, and data presentation appearance as you move through the fold tabs.

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The Measurement Window has a similar folder tab appearance. In this window you will set up the conditions for the overall device measurements for both DC and RF. Through the menu you are given the ability to:

• Set up measurement instruments.
• Set-up measurement conditions.
• Pad Open/Short de-embedding.   View Illustration
• Control DC and RF measurements.   View Illustration

The last component of the package is the Extraction Window. This window sets up extraction conditions and performs the complete Agilent HBT model. As with the other two control windows, the extraction process also uses the convenient tab approach to move through the simulation and extraction process.

The capabilities in the extraction to:

• Set simulation, temperature conditions, and view the main circuit.

• Set boundary values.
• Modify and execute the parameter extraction and optimization.   View Illustration

The Agilent HBT Model and Key Features

The Agilent HBT Model Extraction Package is a state-of-the-art model for large-signal, non-linear circuit simulation using high-frequency compound semiconductor devices such as GaAs and InP.

The model development is a result of the efforts of Dr. David Root and Masaya Iwamoto of Agilent Technologies' Microwave Technology Center for internal device and circuit design. The resulting efforts have resulted in a state-of-the-art model that surpasses other HBT modeling options.

Previously, designers have had to use existing silicon bipolar junction transistor (Si BJT) models, such as the Vertical Bipolar Inter-Company (VBIC) and Gummel-Poon models. Using these models resulted in limited simulation accuracy, fabrication and device measurement iterations, increasing development time and expense.

Key Features

• The new graphical user interface (GUI) in IC-CAP enables quick setup of measurements followed by automatic parameter extraction routines.
• The easy-to-use GUI (tabbed pages) are placed in a convenient flow from left to right according to the task flow in measurements and extractions to make the interface intuitive.
• Global setting feature allows quick and certain setup in measurements.
• Data management functionality allows flexible handling of measurement data.
• De-embedding process and data sets used for de-embedding are intuitively controlled and managed by introducing the concept of De-embedding Sets.
• Recommended measurement setups and extraction procedures are included for effective HBT modeling.
• Powerful extraction flow edit capability and new Function Editor with which you can configure functions are available to build/customize your original extraction routines for different processes.
• The new Multiplot feature allows you to view measured or simulated plots in one window together. The user-configurable plot display window (Extraction Result Browser) allows quick review of extraction results.

Pricing and Availability

The Agilent HBT Model Extraction Package (85193HL) is orderable now. IC-CAP parameter extraction software is available now. Contact your local Agilent EEsof EDA sales engineer for pricing.

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