Agilent HBT Model

The Agilent HBT Model is a nonlinear circuit simulation model designed explicitly for III-V (GaAs and InP) HBTs. It builds on the essential compound semiconductor physics-based model introduced in the DARPA/UCSD HBT model, widely referred to as the "UCSD model." Significant advances and improvements over this model, as well as a robust implementation in ADS, have been achieved. This makes the Agilent HBT a preferred alternative to Si-based BJT models or university written code for serious and accurate product design in III-V HBT technology. The Agilent HBT Model model significantly improves the simulation accuracy and convergence for high-frequency IC designs and helps reduce the number of design cycles. Model Extraction Publications and Seminars PDF Version of This Page   (PDF, 31 KB) Localized Versions   Japan

The Agilent HBT model can fit the complex f_T vs. I_c characteristic for a wide range of collector voltage bias, V_ce.

View Full-Sized Image (17 KB)
Typical f_T vs. I_cCharacteristic

Model extraction is critical for successful circuit simulation in ADS. A set of model parameters is extracted from the measurement data in order to obtain the most accurate result. For engineers wishing to have model parameter extraction, Agilent plans to offer the following two options:

• Agilent Parameter Extraction. The first option is the device modeling service. Agilent will perform the model extraction at the Singapore Modeling Center and at the Agilent factory in Santa Rosa, CA. The Santa Rosa facility with its own a GaAs foundry is where the model was developed.
• In-House Modeling. The second option is for foundries or companies with existing in-house modeling capability; Agilent will provide training on the model as well as the extraction process. This training service is expected to include a set of extraction tools for use with Agilent's device modeling software, IC-CAP (Integrated Circuit Characterization and Analysis Program), as well as an initial extraction of your device. Several of the leading GaAs and InP foundries have already begun efforts to provide process design kits that use the Agilent HBT model.

• Peggy Aycinena, High Priests & Gurus: A rare chance to talk with those who stir the (virtual) HBT cauldron, EDA Weekly, 2 February 2004. Current issue: EDA Weekly.

Agilent Technologies, A Nonlinear Circuit Simulation Model For GaAs and InP Heterojunction Bipolar Transistors, Microwave Journal cover feature, December 2003.

• Masaya Iwamoto and David Root, Agilent Technologies, Agilent HBT: A Large-Signal Model for GaAs and InP HBTs, 60-slide technical presentation. October 2003. (PDF, 1.3 MB)

• Masaya Iwamoto, et al., Large-Signal HBT Model with Improved Collector Transit Time Formulation for GaAs and InP Technologies, IEEE Microwave Symposium Digest, 2003 IEEE MTT-S International, 8 - 13 June 2003. 4-page technical paper.

top of page     printer-friendly version     email this page