IC-CAP Model Extraction Packages

IC-CAP provides extraction modules for a wide range of popular device models. In addition, IC-CAP provides the flexibility to develop custom model equations and extraction flow steps to customize your model to your particular process. The step-by-step extraction packages are easy to use and include the appropriate measurement setups, plot definitions, mathematical transforms, optimization routines and automation macros to help you start modeling more quickly. These extraction modules can also be used as a foundation or template for building custom models using your own extraction techniques. IC-CAP covers a wide range of model types such as Diodes, MOS, BJT, MESFET/HEMT, Noise, Thermal Effects and many others. There are a choice of models for the various types of devices. Modeling capabilities are not limited to our extraction modules. IC-CAP's open architecture gives you the power to build your own models and model extraction flow directly into IC-CAP. IC-CAP supports the latest industry standard models with highly effective and automated extraction algorithms, including several high-frequency models with unique techniques for those special applications where the standard models will not fit. These proprietary Agilent EEsof EDA models are also used in the high-frequency nonlinear circuit simulation tools from Agilent EEsof EDA Advanced Design System. Noise Models IC-CAP MOS Models IC-CAP BJT Models IC-CAP MESFET Models Localized Versions   Korea   Taiwan   China

1/f Noise Modeling Package

The 1/f noise or Flicker noise is an important noise source generated at low frequencies. Accurate measurement and modeling of 1/f noise for deep sub-micron CMOS, BJT, FET and HBT devices as well as RF passive components are critical to RF circuit designs.

For example, the 1/f noise shows up as phase noise in an oscillator design where it mixes to the oscillation frequency, causing the oscillator unstable. A noisy local oscillator signal can degrade a receiver's useful dynamic range and selectivity, making it difficult to recover a signal buried in the noise.

The package offers the following benefits:

• Repeatable measurement solution.
• Accurate and reliable measurement system.
• Extraction routines that are fully automated, fast, efficient and easy-to-use, taking advantage of the latest enhancements and new features of the new IC-CAP Release 2001.

The 1/f noise package provides an open and flexible extraction routine in IC-CAP. The model file contains setups and wizards that automate your measurement and extraction process, making it a push-button solution. For example, the GUI layer invokes dialogues that guide you step-by-step through the entire process of measurement, extraction, and simulation.

This intuitive Start Wizard walks you through all the steps of a successful parameter extraction

First select a DC bias point Vd

Extraction of Ef parameter at a given Vg

Af and Kf Parameter Extraction

A critical element in noise modeling is a reliable and repeatable measurement system. IC-CAP provides the drivers to control instruments such as the Agilent 4142B/4156C Modular DC Source/Precision Semiconductor Parameter Analyzer for DC measurements and the Agilent 35670A Dynamic Signal Analyzer for noise measurements.

Setting up of instruments and other measurement conditions is simple with the provided interface

This module offers noise models for both MOSFET and BJT devices.

Agilent Root MOSFET

This data-based model uses interpolative spline fitting of S-parameters and DC data arrays over the device's operating range.

It has a general approach that can accurately capture device specific non-linearities. It has highly automated model generation for both digital and analog 3-terminal applications.

Philips MOS Model 9 with Quick Extraction and Junction Capacitance Model

Philips MOS Model 9 is a compact MOSFET model suitable for both digital and analog circuit applications. It has single equations covering the variations of current and charge in all device operating regions.

All important physical effects are modeled such as substrate body effect, drain induced barrier lowering, channel-length modulation, and avalanche multiplication.

MOS Model 9 is in the public domain and has been implemented within IC-CAP through work jointly carried out by Philips Research Labs, the National Microelectronics Research Center (NMRC) at the University of Cork in Ireland, and Agilent EEsof EDA.

The quick extraction method has been implemented in IC-CAP. With this method, minimal optimization is needed for parameter extractions.

For example, with the quick extraction method only 40 I-V data points are needed to extract a parameter set. This is in contrast to conventional procedures which typically require 500 to 600 I-V data points for each transistor.

This allows you to build up a database for statistical modeling quickly. A junction capacitance model with extraction methodology has also been implemented with this update.

For more information on the Philips MOS Model 9, including model features, parameter descriptions, model equations, and source code, click on the following link:

• Philips Semiconductor Compact Transistor Models: MOS Model 9

BCTM VBIC BJT

VBIC is the abbreviation for Vertical Bipolar Inter-Company, a public-domain model developed by the BCTM (Bipolar Circuits and Technology Meeting) consortium. It models quasi-saturation, avalanche, and substrate effects. The latest release includes self-heating effects.

Agilent EEsof EDA has implemented the latest version of VBIC in IC-CAP with the most effective and accurate extraction routines and high-level automation features.

Philips MEXTRAM BJT

IC-CAP provides extraction routines for the MEXTRAM 503 and 504 models.

MEXTRAM stands for Most Exquisite Transistor Model. It is a public domain BJT model. Like Philips MOS Model 9, it has been implemented into IC-CAP through work jointly carried out by Philips Research Labs, TU Delft, and Agilent EEsof EDA. It has been used extensively within Philips and has proven to be extremely accurate and robust.

The MEXTRAM model takes into account many physical phenomena associated with modern BJT technologies and is therefore much more accurate than the traditional SPICE Gummel-Poon model. IC-CAP implementation of this model has the most efficient and accurate extraction routines and automation features.

For more information on the Philips MEXTRAM BJT Model, such as model features, parameter descriptions, model equations, and source code, click on the following link:

• Philips Semiconductor Compact Transistor Models: Mextram

High-Frequency BJT Models Package

The High Frequency BJT Models package offers the following Gummel-Poon-based BJT models with high frequency extensions.

• Gummel-Poon BJT Model
  
  This semi-empirical model has been the industry standard for BJT devices. IC-CAP extracts Gummel-Poon parameters utilizing a combination of DC, capacitance vs. voltage (CV), and S-parameter measurements.

• Agilent EEsof EDA High-Frequency Gummel-Poon BJT
  
  This model includes RF extraction routines for three-terminal NPN BJT devices. CV measurements are replaced with S-parameter measurements, making the junction capacitance extraction more convenient and accurate. Improved methods for extracting ideality, base resistance, and reverse Early voltage are also included.

• Agilent EEsof EDA EEBJT2 BJT
  
  This model is based on the Gummel-Poon Model with modifications that improve the accuracy of both AC and DC parameters. For 3-terminal, high-frequency, packaged devices, it is highly automated with macros.

MESFET Models Package

The MESFET Models Package offers the following MESFET models for high power FET and HEMT devices.

• Curtice, Statz MESFET
  
  These models include extraction routines for three popular industry standard MESFET models: the Curtice quadratic, Curtice cubic, and Statz (Raytheon) models. The differences between the three models are in the empirical relationships that describe the DC and AC characteristics of the device. IC-CAP extracts the model parameters from a combination of DC and S-parameter measurements.

• Agilent EEsof EDA EEFET3 / EEHEMT1
  
  These are empirical, nonlinear models for general GaAs FET application: large-signal, 3-terminal IC and packaged devices. They accurately model DC and bias-dependent S-parameters, time delay, subthreshold current, and dispersion of Rds.
  
  Also included is the drain current model based on Agilent EEsof EDA models of original equations and advanced models for Cgs and Cgd, including transcapacitance effects. Static self-heating effects in drain current are also taken into account. The module provides highly automated parameter extraction techniques with package parasitics extracted automatically. HEMTs are similar to MESFETs but with one distinguishing difference in the behavior of gm vs. Vgs.
  
  EEHEMT1 is a superset of EEFET3 and has a set of analytic functions for modeling the gm compression of a HEMT.

Agilent Root MESFET / HEMT

These are process and technology independent, data-based models for large-signal, 3-terminal applications. They model nonlinearities of GaAs FETs and HEMTs, including frequency dispersion. These models are scalable for varying geometries and have automated data acquisition and high-speed model generation.

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