Northrop Grumman provides a complete foundry service for Gallium Arsenide (GaAs) power amplifiers and control circuits within the 1-40 GHz range. The standard FET/HEMT service uses 4-inch GaAs wafers with MBE epitaxial layers and either 0.25 or 0.5µ gates generated with E-beam. This ensures quality amplifiers with state-of-the-art power and efficiency. HBT standard service is also available. Northrop Grumman Electronic Systems Advanced Technology Center
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