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Agilent EEsof EDA Applications: Device Modeling

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Device Modeling

Device modeling is essential for accurate circuit simulations.

When used with IC-CAP parameter extraction software for active device characterization, Agilent modeling systems provide turn-key solutions for DC, CV, pulsed and RF measurements. IC-CAP also links directly to Advanced Design System.

Additional design support is provided by a growing number of examples and training classes, and by Agilent EEsof EDA technical support.

Click on any of the links on this page to learn more about examples and products using EDA tools from Agilent EEsof EDA.
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Products

Agilent EEsof EDA products that support device modeling and parameter extraction include the following:

DesignGuides

DesignGuides for Advanced Design System guide you through complex multi-step design flows and automate the setup, simulation, and data display of complete designs

Customer Success Stories

• Resonext Communication Uses IC-CAP Modeling Software to Provide Accurate RF Device Models for Wireless Network IC Designs
HTML  PDF  (58 KB)
• How Dr. Walter Curtice Gets Results with Agilent EEsof's IC-CAP Device Modeling Software
HTML  PDF  (106 KB)
• Giga Solution Provides Accurate RF Model Libraries Using Agilent Technologies' Modeling System
HTML  PDF  (174 KB)

Contact Agilent EEsof EDA

To contact an Agilent Technologies representative by telephone for help with Product Selection and Product Purchase, click on the following link:
• Sales
To send an e-mail message to Agilent EEsof EDA, click on the following link:
• Send E-mail to Agilent EEsof EDA
 

Support Examples

Support Examples for IC-CAP can be found in the
Agilent EEsof Knowledge Center.

Training Classes

• Overview: Customer Education
• IC-CAP User Training

Agilent Publications and Links

• HICUM Scaling Model and Statistical Models (Japanese)   (PDF, 1.2 MB)
• HiSIM2 Model Overview (Japanese)   (PDF, 14.4 MB)
Device Modeling Seminar Japan 2004
20 July 2004
• Accurate DC to RF Modeling Methodologies with IC-CAP (Japanese)   (PDF, 852 KB)
• Advanced Bipolar Transistor Modeling with MEXTRAM   (PDF, 811 KB)
• Scaling RF-Modeling with BSIM4 (Japanese)   (PDF, 3.3 MB)
• Techniques and Solutions for Obtaining Accurate and Consistent Device Modeling Measurements (Japanese)   (PDF, 3.8 MB)
• Agilent Modeling Consulting Services (Japanese)   (PDF, 1.4 MB)
Modeling Tutorials
• Dr. Franz Sischka, Agilent Technologies, Basics of DC and AC Characterization of Semiconductors. (PDF, 971 KB). 41-page invited seminar presentation, Technicsche Universität München, Lehrstuhl für Technische Elektronik. 28 January 2003
• Dr. Franz Sischka, Agilent Technologies, Modeling of a TSOP44 Package. (PDF, 1.0 MB). 14-page step-by-step tutorial. September 2001
RF IC Design Workshop, March 2002
• Frederic Hameau and Olivier Rozeau, CAE/LETI, Radio-Frequency Circuits Integration Using CMOS SOI 0.25 µm Technology. (PDF, 446 KB). 6-page technical paper. March 2002
• Frederic Hameau and Olivier Rozeau, CAE/LETI, Radio-Frequency Circuits Integration Using CMOS SOI 0.25 µm Technology. (PDF, 1.7 MB). 30-slide technical presentation. March 2002
RF CMOS Device Modeling Seminar
• Dr. Thomas Gneiting, Advanced Modeling Solutions, Stuttgart, Germany, BSIM4, BSIM3v3 and BSIMOI RF MOS Modeling Seminar. (PDF, 1.1 MB). 4 April 2001
IC-CAP User's Conference Papers
• Dr. Klaus Kelting, Infineon Technologies AG, Munich, Germany, Parameter Extraction Using IC-CAP 5.3. (PDF, 1.5 MB)
• Dr. Andries Scholten, et al., Philips Research Laboratories, Eindhoven, The Netherlands, RF CMOS Parameter Extraction and Model Verification Using IC-CAP. (PDF, 1.3 MB)
• Roberto Tinti, et al., 1/f Noise Parameter Extraction and Measurement System Solution. (PDF, 570 KB)
• Dr. Fujiang Lin, et al., Extraction of VBIC Model for SiGe HBTs Made Easy by Going Through Gummel-Poon Model. (PDF, 2.0 MB)
Technical Papers
• Mike Brunsman, Motorola/Freescale, De-embedding Series-Connected / Transmission Configured Devices. (PDF, 303 KB). 19-page technical paper including IC-CAP application code.
• Mike Brunsman, Motorola/Freescale, Verification of On-Wafer (SOLT) Calibration. (PDF, 249 KB). 19-page technical paper including IC-CAP application code.
• Scott A. Wartenberg, et al., The EPHEMT Gate at Microwave Frequencies. (PDF, 212 KB). 16-page technical paper. September 2002.
• Alfred Blaum, et al., Motorola, Inc., A New Robust On-Wafer Noise Measurement and Characterization System. (PDF, 155 KB). 6-page technical paper.
• Dr. Franz Sischka, Agilent Technologies , Applying Nonlinear RF Device Modeling To Verify S-Parameter Linearity. (PDF, 386 KB). 17-page technical paper. European Microwave Week. September 2001
• Mark Dunn and Bob Schaefer, Isothermal Measurements and Modeling with Pulsed Modeling System. (PDF, 1.5 MB)
• Dr. Franz Sischka, Advanced Nonlinear Device Modeling Beyond Linear S-parameters. (PDF, 390 KB)

Technical Articles and Links

• C. Y. Su, et al., An Automatic Macro Program for Radio Frequency MOSFET Characteristics Analysis, Microwave Journal, October 2001. PDF Version (109 KB). Current Issue: Microwave Journal.

• Dan Stoneking, Improving the manufacturability of electronic designs, IEEE Spectrum, June 1999. Current Issue: IEEE Spectrum.